
Please use this identifier to cite or link to this item:
https://repositori.mypolycc.edu.my/jspui/handle/123456789/9189Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jabatan Kejuruteraan Elektrik (JKE) | - |
| dc.date.accessioned | 2026-04-08T04:27:35Z | - |
| dc.date.available | 2026-04-08T04:27:35Z | - |
| dc.date.issued | 2017-10-22 | - |
| dc.identifier.uri | https://repositori.mypolycc.edu.my/jspui/handle/123456789/9189 | - |
| dc.description | Kertas ini mengandungi SEBELAS (11) halaman bercetak. Bahagian B: Struktur (4 soalan) Dokumen sokongan yang disertakan : Tiada | ms_IN |
| dc.language.iso | en | ms_IN |
| dc.publisher | Bahagian Peperiksaan Dan Penilaian, JPPKK | ms_IN |
| dc.subject | Transistor Bipolar Junction Transistor (BJT) | ms_IN |
| dc.subject | Field Effect Transistor (FET) | ms_IN |
| dc.subject | SCR (Silicon Controlled Rectifier) | ms_IN |
| dc.title | Semiconductor Devices | ms_IN |
| dc.title.alternative | DEE2023 | ms_IN |
| Appears in Collections: | Exam Paper Collections | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| JKE DEE2023 SEMICONDUCTOR DEVICES 22 OKTOBER 2017.pdf | 905.16 kB | Adobe PDF | View/Open |
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